2SC3936

Transistors 2SC3936 Silicon NPN epitaxial planar type For high-frequency amplification 0.3+–00..01 Unit: mm 0.15+–00..0150 (0.425) ■ Features 3 Optimum for RF amplification, oscillation, mixing, and IF of 1.25±0.10 2.1±0.1 5˚ FM/AM radios S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.65) (0.65) / ■ Absolute Maximum Ratings Ta = 25°C 1.3±0.1 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 5 0 to 0.1 0.9±0.1 0.9–+00..12 V a e cle con Collector current IC 30 mA lifecy , dis Collector power dissipation PC 150 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 10˚ Marking Symbol: K 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package 0.2±0.1 in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V tinue anc Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 20 V M is con inten Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V /Dis ma Forward current transfer ratio * hFE VCE = 10 V, IC = 1 mA 70 250  D ance type, Transition frequency fT VCB ...