Description
Data Sheet
10V Drive Nch MOSFET
RCD060N25
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
CPT3
(SC-63)
6.5 5.1
2.3 0.5
1.5 5.5
Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.
0.9 2.3
(1) (2) (3)
2.3
0.8Min.
0.65
0.5 1.0
Application Switching
Packaging specifications Package Code Basic ordering unit (pieces) RCD060N25 Type Taping TL 2500
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Inner circuit
∗1
Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25C
(1) Gate (2) Drain (3) Source
(1)
(2)
(3)
Limits 250 30 6 24 6 24 3 2.62 20 150 55 to 150
Unit V V A A A A A mJ W C C
1 BODY DIODE
VDSS VGSS Continuous Pulsed Continuous Pulsed ID *3 IDP *1,3 IS ISP
*1
IAS *2 EAS *2 PD *4 Tch Tstg
*3 Limited only by maximum channel temperature allowed. *4 TC=25C
Thermal resistance Parameter Channel to Case
* T C=25°C * Limited only by maximum channel temperature allowed.
Symbol Rth (ch-c)*
Limits 6.25
Unit C / W
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1/6
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
2.5
0.75
0.9
1.5
9.5
RCD060N25
Electrical characteristics (Ta = 25 C) Para...
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