RB550SS-30

Data Sheet Schottky Barrier Diode RB550SS-30 Applications Small current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.8 0.5 0.4±0.05 Features 1)Small mold type (KMD2) 2)High reliability 3)Low IR 0.8±0.05 1.6±0.05 1.2±0.05 0～0.03 KMD2 Structure 0.6±0.03 0.7±0.05 Construction Silicon epitaxial planer ROHM : KMD2 JEDEC :JEITA : dot (year week factory) Taping dimensions (Unit : mm) www.DataSheet.co.kr Absolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io Forward current surge peak (60Hz ･1cyc.) Limits 30 30 0.5 5 150 40 to 150 Unit V V A A C C IFSM Tj Tstg (*1) On the Glass epoxy board , 180°Half Sine wave Electrical characteristics (Ta=25C) Parameter Symbol VF Forward Voltage Reverse Current IR Junction temperature Storage temperature Min. - Typ. 0.53 1.00 Max. 0.59 8.00 Unit V μA Conditions IF=0.5A VR=15V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.12 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ 1.2 RB550SS-30 　 Data Sheet 1 10000 Tj=150°C 1000 FORWARD CURRENT:IF(A) Tj=125°C 0.1 Tj=150°C Tj=25°C REVERSE CURRENT:IR(mA) 100 Tj=125°C 10 Tj=75°C 1 Tj=75°C 0.01 0 200 400 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.1 0 5 10 15 20 Tj=25°C 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 f=1MHz 600 580 FORWARD VOLTAGE:VF(mV) IF=0.5A Tj=25°C CAPACITANCE BETWEEN TERM...