RB541XN

Data Sheet Schottky Barrier Diode RB541XN Applications Rectify small power Dimensions (Unit : mm) Land size figure (Unit : mm) 0.65 0.25± 0.1 0.05 0.65 2.0±0.2 リードとも Each lead has same dimension (5) (4) 0.15±0.05 1.25±0.1 3)High reliability (1) 0.65 (2) 0.65 (3) 2.1±0.1 Features 1)Small mold type. (UMD6) 2)Low VF 0.9 0～0.1 0.35 UMD6 Construction Silicon epitaxial planer 1.3±0.1 0.7 0.9±0.1 0.1Min Structure ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 0.3±0.1 www.DataSheet.co.kr 3.5±0.05 1.75±0.1 2.45±0.1 2.4±0.1 5.5±0.2 8.0±0.2 2.2±0.1 4.0±0.1 φ1.1±0.1 0～0.5 2.4±0.1 1.15±0.1 Absolute maximum ratings (Ta=25C) Parameter Symbol VR Reverse voltage (DC) Average rectified forward voltage (*1) Io IFSM Forward voltage surge peak (60Hz・1cyc) (*2) Junction temperature Tj Storage temperature Tstg (*1) Rating of per diode:1/3Io (*2) Rating of per diode Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current *Rating of per diode IR Limits 30 100 500 125 40 to 125 Unit V mA mA C C Min. - Typ. - Max. 0.35 10 Unit V μA Conditions IF=10mA VR=10V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ 1.6 (6) RB541XN 　 Data Sheet 1000 Ta=125°C 100 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(mA) Ta=75°C 10000 Ta=125°C 1000 Ta=75°C 100 Ta=25°C 10 10 1 Ta=2...