Data Sheet
Schottky Barrier Diode
RB168M150
Applications General rectification Dimensions (Unit : mm)
1.6±0.1 0.1±0.1...
Data Sheet
Schottky Barrier Diode
RB168M150
Applications General rectification Dimensions (Unit : mm)
1.6±0.1 0.1±0.1 0.05
Land size figure (Unit : mm)
1.2
0.85
2.6±0.1
3.5±0.2
Features 1)Small power mold type. (PMDU) 2)High reliability
PMDU
Construction Silicon epitaxial planer
Structure
0.9±0.1
ROHM : PMDU JEDEC :SOD-123 Manufacture Date
0.8±0.1
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.05
3.5±0.05
1.75±0.1
0.25±0.05
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8.0±0.2
1.81±0.1
4.0±0.1
φ1.0±0.1
3.71±0.1
1.5MAX
Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1) Business frequence, R-road, Tc=110°C max. Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current IR
Limits 150 150 1 30 150 - 55 to +150
Unit V V A A °C °C
Min. -
Typ. 0.76 0.11
Max. 0.84 20
Unit V μA IF=1A VR=150V
Conditions
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1/4
2011.09 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
3.05
①
RB168M150
Data Sheet
1 Ta=150°C FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(µA)
1000 Ta=150°C Ta=125°C
100
Ta=125°C Ta=75°C 0.1
10 Ta=75°C 1 Ta=25°C
0.1
Ta=25°C Ta=−25°C 0.01 200 400 600 800 1000 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
0.01 Ta=−25°C
0.001
0.0001 0 50 100 150 REVERSE VOLTAGE:VR(...