RB161L-40

RB161L-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY RECTIFICATION AND SWITCHING POWER SUPPLY Features Compact power mold type Ultra low VF VRM = 40 V guaranteed Maximum Ratings and Electrical Characteristics Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive load, For capacitive load, derate by 20% Parameter www.DataSheet.co.kr Symbol VRM VR Value 40 20 1 70 0.4 1 125 - 40 to + 125 Unit V V A A V mA O Peak Reverse Voltage DC Blocking Voltage Mean Rectifying Current 1) IO IFSM VF IR TJ TS Peak Forward Surge Current Maximum Forward Voltage at IF = 1 A Maximum Reverse Current at VR = 20V Operating Junction Temperature Range Storage Temperature Range 1) C C O When mounting on PCB SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/04/2008 Datasheet pdf - http://www.DataSheet4U.net/ RB161L-40 10 100m Ta=125 C 10m 1 Forward Current: I F (A) Reverse Current: I R (A) 1m 75 C 100m Ta =1 25 C C 10m -25 C 75 25 C 100 25 C 10 -25 C 1 1m 0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 50 Forward Voltage: VF (V) Fig. 1 Forward Characteristics 1n 0.5 Reverse Voltage: VR (V) Fig. 2 Reverse Characteristics DC D=0.8 Forward Power Dissipation: P F (W) 0.4 sine 0.3 D=0.1 D=0.05 D=0.3 D=0.2 Terminal Capacitance: CT (F) D=0.5 100p 0.2 IF IO 0.1 www.DataSheet.co.k...