RB055L-30

Data Sheet Schottky Barrier Diode RB055L-30 lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 2.0 2.6±0.2 lFeatures 1)Small power mold type. (PMDS) 2)High reliability 3)Low VF 1.2±0.3 2.0 4.5±0.2 4 ① 5 ② 0.1±0.02 　　　 0.1 5.0±0.3 1.5±0.2 2.0±0.2 PMDS lConstruction Silicon epitaxial planer ROHM : PMDS ① ② Manufacture Date lStructure lTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 1.75±0.1 4.2 0.3 5.5±0.05 www.DataSheet.co.kr φ 1.55 2.9±0.1 4.0±0.1 2.8MAX lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1) Mounted on Alumina board, Tc=110°C MAX. lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltagae Reverse current IR Limits 30 30 3 55 150 -55 to +150 Unit V V A A C C Min. - Typ. - Max. 0.55 50 Unit V μA Conditions IF=3.0A VR=30V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5.3±0.1 0.05 　 9.5±0.1 1/4 2011.10 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ 12±0.2 RB055L-30 　 Data Sheet 10 Ta=150°C 100000 Ta=125°C Ta=100°C 10000 REVERSE CURRENT:IR(mA) Ta=150°C 1 FORWARD CURRENT:IF(A) Ta=125°C 0.1 Ta=100°C 1000 Ta=75°C 0.01 100 Ta=75°C 10 Ta=25°C 0.001 Ta=25°C 0.0001 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 ...