R8008ANX

R8008ANX 　　Nch 800V 8A Power MOSFET 　　 Datasheet VDSS 800V lOutline 　 RDS(on)(Max.) 1.03Ω ID ±8A TO-220FM PD 66W 　 　　　　　　 lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed 　　to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing Bulk Reel size (mm) - lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) 500 Taping code - Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R8008ANX Unit Drain - Source voltage VDSS 800 V Continuous drain current TC = 25°C TC = 100°C ID*1 ID*1 ±8 A ±3.9 A Pulsed drain current IDP*2 ±32 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 4 A Avalanche energy, single pulse EAS*3 4.2 mJ Avalanche energy, repetitive EAR*4 3.3 mJ Power dissipation (Tc = 25°C) PD 66 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ Reverse diode dv/dt dv/dt 15 V/ns 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/13 20160324 - Rev.002 　 　 R8008ANX 　 　 　 　　 　 lAbsolute maximum ratings Parameter Drain - Source voltage slope lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junct...