R6046FNZ

Data Sheet 10V Drive Nch MOSFET R6046FNZ  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-3PF 4.5 5.5 15.5 φ3.6 10.0 3.0 0.75  Application Switching (1) Gate (2) Drain (3) Source 14.8 (1) (2) 2.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 26.5 16.5 14.5 0.44 16.5 3.5 2.0 2.0 3.0 2.0 (3) 0.9 5.45 5.45  Packaging specifications Type R6046FNZ Package Code Basic ordering unit (pieces) Bulk 360   Inner circuit ∗1 www.DataSheet.co.kr  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25°C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Limits 600 30 46 115 46 115 23 142 120 150 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP *1 IS ISP IAS EAS PD Tch Tstg *3 *1 *2 *2 *4 *3 Limited only by maximum channel temperature allowed. *4 TC=25°C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 1.04 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ R6046FNZ  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-so...