R6012ANJ

10V Drive Nch MOSFET R6012ANJ zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) LPTS 10.1 4.5 1.3 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 7.25 13.1 3.0 1.0 1.24 9.0 0.78 5.08 2.7 (1) Gate (2) Drain (3) Source (1) (2) (3) Each lead has same dimensions zApplications Switching LPTL 8.9 4.8 zPackaging specifications Package Type Code Basic ordering unit (pieces) Taping LPTS LPTL 1000 TL TLL www.DataSheet.co.kr (1) Gate (2) Drain (3) Source (1) (2) (3) Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed zInner circuit Limits 600 ±30 Unit V V A A A A A mJ W °C °C (1) (1) Gate (2) Drain (3) Source Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg ∗3 ∗1 ∗3 ∗1 ∗2 ∗2 ±12 ±48 12 48 6 9.6 100 150 −55 to +150 ∗1 (2) (3) ∗1 Body Diode zThermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 1.25 Unit °C/W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.04 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ 1.2 2.54 0...