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European PowerSemiconductor and Electronics Company GmbH + Co. KG
Marketing Information FZ 900 R 16 KF...
Submit by Email
European PowerSemiconductor and Electronics Company GmbH + Co. KG
Marketing Information FZ 900 R 16 KF 1
18 61,5
M8
screwing depth max. 8
31,5
130 114
C
www.DataSheet.co.kr
C
E
E
E
C
7 28 16,5
G
M4
2,5 18,5
external connection to be done
C C
C
G
E E E
external connection to be done
A15/97 Mod-E/ 21.Jan 1998 G.Schulze
Datasheet pdf - http://www.DataSheet4U.net/
FZ 900 R 16 KF1
Höchstzulässige Werte / Max imum ra ted va lues
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom
Isolations-Prüfspannung
collector-emitter voltage DC-collector current repetitive peak collctor current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw. current insulation test voltage tp=1 ms tC=25°C,
Transistor /
transistor
VCES
IC ICRM
1200 V 1200 A 2400 A 7800 W ± 20 V 1200 A 2400 A 2,5 kV
Ptot VGE
IF
tp=1ms RMS, f=50 Hz, t= 1 min.
IFRM
VISOL min. 4,5 -
Charakteristische Werte / Characteristic values:
Transistor
Kollektor-Emitter Sättigungsspannung Gate-Schwellenspannung Eingangskapazität Kollektor-Emitter Reststrom Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit (induktive Last) collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage ...
