VT4045BP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Pr...
VT4045BP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier
Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.28 V at IF = 5 A
TMBS®
TO-220AC
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Compliant to RoHS Directive 2011/65/EU Halogen-free according to IEC 61249-2-21 definition
2 1
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PIN 1
PIN 2
CASE
MECHANICAL DATA PRIMARY CHARACTERISTCS
IF(DC) VRRM IFSM VF at IF = 40 A TOP max. (AC mode) TJ max. (DC forward current) 40 A 45 V 240 A 0.51 V 150 °C 200 °C
Case: TO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
www.DataSheet.co.kr
per
Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum DC forward bypassing current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction temperature range (AC mode) Junction temperature in DC forward current without reverse bias, t 1 h Notes (1) With heatsink (2) Meets the requirements of IEC...