Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
New Product
VB40M120C
www.vishay.com
Vishay General Semiconductor
Ultra Low VF = 0.46 V at IF = 5 A
FEATURES
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-263AB
Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
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