V10P45S

New Product V10P45S Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low VF = 0.34 V at IF = 5 A FEATURES TMBS® K eSMP® Series Very low profile - typical height of 1.1 mm Ideal for automated placement Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TOP max. 10 A 45 V 180 A 0.41 V 150 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade www.DataSheet.co.kr Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Junction temperature in DC forward current without reverse bias, t  1 h Operating junction temperature range Storage temperature ra...