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V10150C, VI10150C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.63 at IF = 3 A
TO-220AB
TMBS ®
TO-262AA K
V10150C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VI10150C
3 2 1
PIN 1
PIN 2
PIN 3
K
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5 A TJ max. Package
2 x 5.0 A 150 V 60 A 0.69 V 150 °C
TO-220AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1)
per device per diode
VRRM IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
Voltage rate of change (rated VR) Operating junction and storage temperature range
dV/dt TJ, TSTG
V10150C
VI10150C
150
10
5.0
60
10 000 -55 to +150
UNIT V A
A V/μs °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode Reverse current per diode
IF = 3 A IF = 5 A IF = 3 A IF = 5 A
VR = 100 V
VR = 150 V
TA = 25 °C
TA = 125 °C
TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C
VF (1) IR (2)
0.82 0.99 0.63 0.69 0.5 0.5
1.0
Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
MAX. -
1.41 -
0.75 -
100 10
UNIT
V
μA mA μA mA
Revision: 07-Nov-17
1
Document Number: 89154
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V10150C, VI10150C
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10150C
Typical thermal resistance per diode
RJC
4.0
VI10150C
UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V10150C-M3/4W
1.87
TO-262AA
VI10150C-M3/4W
1.45
PACKAGE CODE 4W 4W
BASE QUANTITY 50/tube 50/tube
DELIVERY MODE Tube Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Ave.