2SC3833
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maxim...
2SC3833
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage and High Speed Switching
Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3833 500 400 10 12(Pulse24) 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching
Regulator and General Purpose
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=–1A VCB=10V, f=1MHz
(Ta=25°C) 2SC3833 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ V MHz pF V Unit
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
µA µA
V
19.9±0.3
4.0
a b
ø3.2±0.1
20.0min
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL (Ω) 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.7 IB2 (A) –1.4 ton (µs) 1.0max tstg (µs) 3.0max tf (µs) 0.5max
5.45±0.1 B C E
5.45±0.1
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
12
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) (I C /I B =5)
I C – V BE Temperature Characteristics (Typical)
12 (V C E =4V)
1000m
10 Collector Current I C (A)
A
80 0m A
60 0m A
10 1
–55˚C (Case 25˚C (Cas
125
Collector Current I C (A)
V B E (sat)
8
400m A
Temp)
8
p) Tem
6
e Temp)
as e ...