2SC3829

Transistors 2SC3829 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm ■ Features Low noise figure NF 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 High gain High forward transfer gain S21e2 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) 1.9±0.1 2.90+–00..0250 5˚ (0.65) / ■ Absolute Maximum Ratings Ta = 25°C 10˚ e e) Parameter Symbol Rating Unit c e. d typ Collector-base voltage (Emitter open) VCBO 15 V n d stag tinue Collector-emitter voltage (Base open) VCEO 10 0 to 0.1 1.1–+00..12 1.1–+00..13 V a e cle con Emitter-base voltage (Collector open) VEBO 2 V lifecy , dis Collector current IC 80 mA n u ct ped Collector power dissipation PC 200 mW te tin Produ ed ty Junction temperature Tj 150 °C ur tinu Storage temperature Tstg −55 to +150 °C Marking Symbol: 3M 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n s followlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions inc typ Collector-base voltage (Emitter open) c tinued ance Collector-emitter voltage (Base open) M is con inten Collector-base cutoff current (Emitter open) /Dis ma Emitter-base cutoff current (Collector open) D ance type, Forward current transfer ratio ten ce Transition frequency ain nan Collector output capacitance M inte (Common base, in...