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2SC3805 Dataheets PDF



Part Number 2SC3805
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3805 Datasheet2SC3805 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3805 TV Horizontal Deflection Output Applications TV Chroma Output Applications 2SC3805 Unit: mm · High voltage: VCEO = 300 V · Low output capacitance: Cob = 3.0 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCB.

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3805 TV Horizontal Deflection Output Applications TV Chroma Output Applications 2SC3805 Unit: mm · High voltage: VCEO = 300 V · Low output capacitance: Cob = 3.0 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 300 300 7 100 200 50 10 150 −55 to 150 Unit V V V mA mA W °C °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7B2A Weight: 0.36 g (typ.) 1 2002-07-23 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob Test Condition VCB = 240 V, IE = 0 VEB = 7 V, IC = 0 VCE = 10 V, IC = 0.5 mA VCE = 10 V, IC = 20 mA IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz Marking 2SC3805 Min Typ. Max Unit ― ― 1.0 µA ― ― 1.0 mA 20 ― ― 30 ― 200 ― ― 1.0 V ― ― 1.0 V 40 70 ― MHz ― 3.0 ― pF C3805 Product No. Lot No. Explanation of Lot No. Month of manufacture: January to December are denoted by letters A to L respectively. Year of manufacture: last decimal digit of the year of manufacture 2 2002-07-23 Collector current IC (mA) 120 100 80 60 40 20 0 0 IC – VCE Common emitter 6 4 Tc = 25°C 3 2 1 0.6 0.4 IB = 0.2 mA 0 4 8 12 16 20 24 Collector-emitter voltage VCE (V) 28 500 300 100 50 30 10 5 0.3 hFE – IC Common emitter VCE = 10 V Tc = 100°C 25 −25 1 3 10 30 Collector current IC (mA) 100 Collector-emitter saturation voltage VCE (sat) (V) DC current gain hFE 2SC3805 500 300 100 50 30 10 5 0.3 hFE – IC Common emitter Tc = 25°C VCE = 20 V 10 5 1 3 10 30 Collector current IC (mA) 100 VCE (sat) – IC 5 Common emitter 3 Tc = 25°C 1 0.5 0.3 0.1 0.05 0.3 IC/IB = 10 5 2 1 3 10 30 Collector current IC (mA) 100 DC current gain hFE Collector-emitter saturation voltage VCE (sat) (V) 3 1 0.5 0.3 0.1 0.05 0.03 0.3 VCE (sat) – IC Common emitter IC/IB = 5 Tc = 100°C 25 −25 1 3 10 30 Collector current IC (mA) 100 Base-emitter saturation voltage VBE (sat) (V) 10 5 3 1 0.5 0.3 0.1 0.3 VBE (sat) – IC Common emitter IC/IB = 5 Tc = 25°C 1 3 10 30 Collector current IC (mA) 100 3 2002-07-23 Collector current IC (mA) 100 Common emitter VCE = 10 V 80 IC – VBE 60 Tc = 100°C 25 −25 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) Cob – VCB 50 30 IE = 0 f = 1 MHz Tc = 25°C 10 5 3 1 1 3 10 30 100 300 Collector-base voltage VCB (V) Transition frequency fT (MHz) 2SC3805 fT – IC 500 Common emitter 300 Tc = 25°C 100 VCE = 20 V 50 5 10 30 10 0.3 1 3 10 30 100 Collector current IC (mA) Collector output capacitance Cob (pF) Collector power dissipation PC (W) 12 (1) 10 PC – Ta (1) Tc = Ta infinite heat sink (2) No heat sink 8 6 4 2 (2) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2002-07-23 2SC3805 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own ris.


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