2SC3792

Ordering number:ENN1858B NPN Epitaxial Planar Silicon Transistor 2SC3792 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers, muting circuits. Features · Adoption of FBET process. · High DC current gain. · High VEBO (VEBO≥25V). · High reverse hFE (150 typ). · Small ON resistance [Ron=1Ω (IB=5mA)] Package Dimensions unit:mm 2003B [2SC3792] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE fT Cob VCB=40V, IE=0 VEB=20V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA VCB=10V, f=1MHz 123 1.3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : NP Ratings 50 20 25 500 800 100 500 150 –55 to +150 Unit V V V mA mA mA mW ˚C ˚C Ratings min typ max Unit 0.1 µA 0.1 µA 300 1200 250 MHz 4.0 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, ...