2SC3673

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications 2SC3673 Unit: mm High DC current gain : hFE = 500 (min) (IC = 400 mA) Low collector-emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 300 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current IB 0.5 A Collector power dissipation PC 1000 mW JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-7D101A Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.2 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SC3673 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emi...