TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications Power Switching Applica...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications Power Switching Applications
2SC3669
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA1429
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
80 80 5 2 1 1000 150 −55 to 150
V V V A A mW °C °C
JEDEC JEITA TOSHIBA
― ― 2-7D101A
Note1: Using continuously under heavy loads (e.g. the application of high
Weight: 0.2 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-21
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage ...