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2SC3668

Toshiba Semiconductor

Silicon NPN Epitaxial Type TRANSISTOR


Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3668 Power Amplifier Applications Power Switching Applications 2SC3668 Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 1000 mW High-speed switching: tstg = 1.0 μ (typ.) Complementary to 2SA1428. Absolute Maximum Ratings (Ta = 2...



Toshiba Semiconductor

2SC3668

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