2SC3663

DATA SHEET SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. GA = 3.5 dB TYP. cordless phones, etc. Gold electrode gives high reliability. Mini mold package, ideal for hybrid ICs. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz @VCE = 1 V, IC = 250 PA, f = 1.0 GHz PACKAGE DIMENSIONS (in mm) 0.4 +0.1 –0.05 2.8 ± 0.2 1.5 0.65–0.15 +0.1 Ideal for battery drive of pagers, compact radio equipment, 0.95 0.95 2.9 ± 0.2 B E C ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 15 8 2 5 50 150 ð65 to +150 UNIT V V V mA mW qC qC PIN CONNECTIONS E: Emitter B: Base C: Collector Marking: R62 0.3 Marking 1.1 to 1.4 ELECTRICAL CHARACTERISTICS (TA = 25 qC) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Insertion Power Gain Maximum Available Gain Noise Figure Associated Power Gain Collector Capacitance SYMBOL ICBO IEBO hFE fT °S21e° MAG NF GA Cob Note 2 TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 250 PA, pulse VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 1 mA, f = 1 GHz VCE = 1 V, IC = 1 mA, f = 1 GHz VCE = 1 V, IC = 250 PA, f = 1.0 GHz VCE = 1 V, IC = 250 PA, f = 1.0 GHz VCB = 1 V, IE = 0, f...