2SC3661

Ordering number:EN1854A NPN Epitaxial Planar Silicon Transistor 2SC3661 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers, muting circuit. Features · Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer. · Adoption of FBET process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Package Dimensions unit:mm 2018A [2SC3661] Conditions C : Collector B : Base E : Emitter SANYO : CP Ratings 30 25 15 300 500 200 125 –55 to +125 Unit V V V mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Marking : FY Symbol Conditions ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=10mA VCB=10V, f=1MHz IC=200mA, IB=4mA IC=200mA, IB=4mA Ratings min typ 800 1500 250 2.7 0.12 0.85 max 0.1 0.1 3200 0.5 1.2 Unit µA µA MHz pF V V Any and all SANYO products described or contained ...