Ordering number:ENN2007A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1419/2SC3649
High-Voltage Switching Applicatio...
Ordering number:ENN2007A
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1419/2SC3649
High-Voltage Switching Applications
Features
· Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide high-
density hybrid ICs.
Package Dimensions
unit:mm 2038A
[2SA1419/2SC3649]
4.5 1.6 1.5
1.0 2.5 4.25max
( ) : 2SA1419
Specifications
Absolute Maximum Ratings at Ta = 25˚C
0.4 0.5
3 1.5 2 3.0
1
0.75
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions Moutned on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)120V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE1 hFE2
VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)10mA
* : The 2SA1419/2SC3649 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE 100 to 200
Marking 2SA1419 : AE 2SC3649 : CE
140 S 280 200 to 400 hFE rank : R, S, T
Ratings (–)180 (–)160 (–)6 (–)1.5 (–)2.5 500 1.5 150
–55 to +150
Unit V V V A A
mW W ˚C ˚C
Ratings min typ max
Unit
(–)1 µA
(–)1 µA
100*
400*
80
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Any and all SANYO products described or contained herein do not have specifications th...