2SB649A

2SB649/2SB649A Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Type Plastic Encapsulate Transistors TO-126C 8.0±0.2 2.0±0.2 4.14±0.1 3.2±0.2 FEATURES Power smplifier applications Power dissipation PCM : 1 W £¨ Tamb=25¡æ £© Collector current ICM : - 1.5 A Collector-base voltage V(BR)CBO : -180 V Collector-emitter voltage VCEO 2SB649 : -120 V 2SB649A : -160 V Operating and storage junction temperature range TJ£¬Tstg: -55¡æ to +150 ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) * DC current gain hFE(2) * Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) * VBE * VCE=- 5V, IC = -500mA IC =- 500 mA, IB=- 50mA VCE=- 5V,IC=-150mA ,, IC=- 150 mA VCE=-5V VCB=-10 V , IE =0,f=1MHz 11.0±0.2 1 2 3 O2.8±0.1 O3.2±0.1 1.4±0.1 1.27±0.1 15.3±0.2 0.76±0.1 2.28 Typ. 4.55±0.1 0.5± 0.1 1: Emitter 2: Collector 3: Base Dimensions in Millimeters unless www.DataSheet.co.kr otherwise specified£© MIN -180 MAX UNIT V V V -10 -10 Test conditions Ic=-1mA £¬ IE=0 Ic=-10mA £¬IB=0 IE=-1mA£¬ Ic=0 VCB=- 160 V, IE=0 VEB= -4V , IC =0 2SB649 2SB649A 2SB649 2SB649A -120 -160 -5 ¦Ì A ¦Ì A VCE= -5V, IC= -150 mA 60 60 30 320 200 -1 -1.5 140 27 V V MHz pF fT C ob * The 2SB...