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2SB649

Part Number	2SB649
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Mar 14, 2012
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage...
Datasheet	2SB649 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.
5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.
5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Tempera...

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