GWM100-0085X1

www.DataSheet.co.kr GWM100-0085X1 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW Straight leads Surface Mount Device G2 S2 MOSFETs Symbol VDSS VGS ID25 ID90 ID110 IF25 IF90 IF110 Symbol TC = 25°C TC = 90°C TC = 110°C TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Conditions Conditions TJ = 25°C to 150°C Maximum Ratings 85 ± 20 103 77 68 tbd tbd tbd V V A A A A A A Applications AC drives in automobiles - electric power steering - starter generator in industrial vehicles - propulsion drives - fork lift drives in battery supplied equipment Features MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Space and weight savings Package options 2 lead forms available - straight leads (SL) - SMD lead version (SMD) (TJ = 25°C, unless otherwise specified) t min. typ. 5.5 12.7 2.0 100 114 30 35 tbd tbd tbd tbd tbd tbd tbd 1.3 RDSon 1) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) on chip level at VGS = 10 V ; ID = 75 A VDS = 20 V; ID = 250 µA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V TJ = 25°C TJ = 1...