NPN Transistor
DATA SHEET
SILICON POWER TRANSISTOR
2SC3588-Z
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
DESCRIPTION
PACKAGE DRAWING ...
Description
DATA SHEET
SILICON POWER
TRANSISTOR
2SC3588-Z
NPN SILICON TRIPLE DIFFUSED
TRANSISTOR
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SC3588-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits.
FEATURES
High Voltage VCEO = 400 V Complement to 2SA1400-Z
5.5 ±0.2
6.5 ±0.2 5.0 ±0.2 4.4 ±0.2
4
Note
1.5
+0.2 −0.1
2.3 ±0.2 0.5 ±0.1 Note
5.6 ±0.3 9.5 ±0.5
123
1.0 ±0.5 0.4 MIN. 0.5 TYP.
2.5 ±0.5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
500
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
7
V
Collector Current (DC)
IC(DC)
0.5
A
Collector Current (pulse) Note 1
IC(pulse)
1.0
A
Total Power Dissipation (TA = 25°C) Note 2
PT
2.0
W
Junction Temperature
Tj
150
°C
2.3 ±0.3
0.5 ±0.1 2.3 ±0.3
0.5 ±0.1 0.15 ±0.15
1. Base 2. Collector 3. Emitter 4. Collector Fin
Note The depth of notch at the top of the fin is from 0 to 0.2 mm.
Storage Temperature
Tstg
−55 to +150 °C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D17289EJ4V0DS00 (4th edition)
(Previous No. TC-1663A)
Date Published July 2006 NS CP...
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