2SC3587

DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN. FEATURES Low noise : NF = 1.7 dB TYP. @ f = 2 GHz C 3.8 MIN. 3.8 MIN. B NF = 2.6 dB TYP. @ f = 4 GHz High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz 3.8 MIN. 45 ° ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT (TC = 25 °C) Tj Tstg RATING 20 10 1.5 35 580 200 -65 to +150 UNIT V V V mA mW °C °C PIN CONNECTIONS E: Emitter C: Collector 0.5 ± 0.05 B: Base 2.55 ± 0.2 E φ 2.1 1.8 MAX. 0.55 ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Noise Figure SYMBOL ICBO IEBO hFE fT Cre NF Note TEST CONDITIONS VCB = 10 V VEB = 1 V VCE = 6 V, IC = 10 mA Pulse VCE = 6 V, IC = 10 mA VCB = 10 V, f = 1 MHz VCE = 6 V, IC = 5 mA f = 2 GHz f = 4 GHz MIN. TYP. 0.1+0.06 -0.03 MAX. 1.0 1.0 0.5 ± 0.05 UNIT µA µA 50 100 10.0 0.2 1.7 2.6 250 GHz 0.7 2.4 pF dB dB dB dB dB dB dB Ins...