2SC3526

Transistor 2SC3526(H) Silicon NPN epitaxial planer type For display video output Unit: mm 5.9± 0.2 4.9± 0.2 q q q 2.54± 0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *R EB = 470Ω (Ta=25˚C) Ratings 110 100 50 3.5 300 150 1.0 150 –55 ~ +150 Unit V V V V mA mA W ˚C ˚C 0.45–0.1 1.27 +0.2 Symbol VCBO VCER* VCEO VEBO ICP IC PC Tj Tstg 13.5± 0.5 0.7–0.2 +0.3 High transition frequency fT. Small collector output capacitance Cob. Wide current range. 0.7± 0.1 8.6± 0.2 s Features 0.45–0.1 1.27 +0.2 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance * (Ta=25˚C) Symbol ICEO VCBO VCER VCEO VEBO hFE VCE(sat) fT1 fT2 Cob Conditions VCE = 35V, IB = 0 IC = 100µA, IE = 0 IC = 500µA, RBE = 470Ω IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 5V, IC = 100mA* IC = 150mA, IB = 15mA* VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = –110mA, f = 200MHz VCB = 30V, IE = 0, f = 1MHz 300 350 3 110 100 50 3.5 20 0.5 V MHz MHz pF min typ max 10 Unit µA V V V V Pulse measurement 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package ...