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SQ7414EN Dataheets PDF



Part Number SQ7414EN
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQ7414EN DatasheetSQ7414EN Datasheet (PDF)

www.DataSheet.co.kr SQ7414EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration PowerPAK 1212-8 FEATURES 60 0.025 0.036 5.6 Single D • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile • PWM Optimized • AEC-Q101 Qualified • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC 3.30 mm S 1 2 3 S S 3.30 mm G G 4.

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www.DataSheet.co.kr SQ7414EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration PowerPAK 1212-8 FEATURES 60 0.025 0.036 5.6 Single D • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile • PWM Optimized • AEC-Q101 Qualified • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC 3.30 mm S 1 2 3 S S 3.30 mm G G 4 D 8 7 6 5 D D D S N-Channel MOSFET Bottom View ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK1212-8 SQ7414EN-T1-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e L = 0.1 mH TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 10 s 60 ± 20 8.7 7 3.2 30 19 18 3.8 2 - 55 to + 175 260 STEADY STATE 60 ± 20 5.6 4.4 1.3 30 19 18 1.5 0.8 - 55 to + 175 260 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) t  10 s PCB Mountc SYMBOL RthJA RthJC TYPICAL 26 65 1.9 MAXIMUM 33 81 2.4 °C/W UNIT Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S11-2129 Rev. D, 31-Oct-11 1 Document Number: 74489 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr SQ7414EN www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V VGS = 0 V VGS = 0 V VGS = 10 V VGS = 10 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V VGS = 10 V VGS = 4.5 V Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Timec Gate Resistance Turn-On Delay R.


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