2SC3474

2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm · High DC current gain: hFE = 500 (min) (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 7 2 0.5 1.0 20 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2002-07-23 2SC3474 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob VCB = 80 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Min Typ. Max Unit ― ― 1 µA ― ― 1 µA 80 ― ― V 500 ― ― ― 0.3 0.5 V ― ― 1.1 V ― 85 ― MHz ― 50 ― pF Turn-on time Switching time Storage time Fall time ton 20 µs IB1 OUTPUT ― 2 ― INPUT ...