2SC3474
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3474
Switching Applications Solenoid Drive Applications
Indu...
2SC3474
TOSHIBA
Transistor Silicon
NPN Epitaxial Type
2SC3474
Switching Applications Solenoid Drive Applications
Industrial Applications Unit: mm
· High DC current gain: hFE = 500 (min) (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
80 80 7 2 0.5 1.0 20 150 −55 to 150
Unit V V V A A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1 2002-07-23
2SC3474
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat)
fT Cob
VCB = 80 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 1 µA
― ― 1 µA
80 ― ―
V
500 ―
―
― 0.3 0.5 V
― ― 1.1 V
― 85 ― MHz
― 50 ― pF
Turn-on time Switching time Storage time
Fall time
ton 20 µs
IB1 OUTPUT ― 2 ―
INPUT
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