2SC3468

Ordering number:ENN1413D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use · Color TV chroma output and high breakdown voltage driver. Package Dimensions unit:mm 2006B [2SA1371/2SC3468] 6.0 5.0 Features · High breakdown votage : VCEO≥300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SA1371 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.45 1.45 1 : Emitter 2 : Collector 3 : Base SANYO :MP Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1.0 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) VCB=(–)200V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)30V, IC=(–)10mA IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA 40* 150 (–)0.6 (–)1.0 Conditions Ratings min typ max (–)0.1 (–)0.1 320* MHz V V Unit µA µA * : The 2SA1371/2SC3468 are classified by 10mA hFE as follow...