2SC3467

Ordering number:EN1412C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1370/2SC3467 High-Definition CRT Display, Video Output Applications Use · Color TV chroma output and high breakdown voltage driver. Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET process. Package Dimensions unit:mm 2006A [2SA1370/2SC3467] ( ) : 2SA1370 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Output Capacitance Symbol Conditions ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob VCB=(–)150, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=10mA VCE=(–)30V, IC=(–)10mA IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 VCB=(–)30V, f=1MHz Reverse Transfer Capacitance Cre VCB=(–)30V, f=1MHz * : The 2SA1370/2SC3467 are classified by 10mA hFE as follows...