2SC3422

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching 2SC3422 Unit: mm Suitable for the output stage of 5-watt car radios and car stereos. Good hFE linearity Complementary to 2SA1359. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC 40 V 40 V 5V 3A 1A 1.5 W 10 JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-8H1A Note1: Using continuously under heavy loads (e.g. the application of high Weight: 0.82 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emi...