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New Product
VBT2045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV ...
www.DataSheet.co.kr
New Product
VBT2045CBP
Vishay General Semiconductor
Trench MOS Barrier
Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 5.0 A
TMBS ®
TO-263AB
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
Not recommended for PCB bottom side wave mounting Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
1 VBT2045CBP
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TOP max. 2 x 10 A 45 V 160 A 0.41 V 150 °C
MECHANICAL DATA
Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range Junction temperature in DC forward current without reverse bias, t ≤ 1 h Notes (1...