SQ3460EV

www.DataSheet.co.kr SQ3460EV www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V RDS(on) () at VGS = 2.5 V RDS(on) () at VGS = 1.8 V ID (A) Configuration TSOP-6 Top V iew 1 6 FEATURES 20 0.030 0.034 0.038 8 Single (1, 2, 5, 6) D Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC 3 mm 2 5 (3) G 3 4 2.85 mm Marking Code: 8Jxxx (4) S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TSOP-6 SQ3460EV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Currentb L = 0.1 mH TC = 25 °C TC = 125 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25 °Ca TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 20 ±8 8 4.8 4.6 32 10 5 3.6 1.2 - 55 to + 175 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJF LIMIT 110 41 UNIT °C/W S11-2359-Rev. D, 05-Dec-11 1 Documen...