Automotive N-Channel MOSFET
www.DataSheet.co.kr
SQ3418EEV
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT S...
Description
www.DataSheet.co.kr
SQ3418EEV
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
TSOP-6 Top V iew
1 6
FEATURES
40 0.032 0.048 8 Single
(1, 2, 5, 6) D
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Typical ESD Protection 800 V AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
3 mm
2
5
(3) G
3
4
2.85 mm Marking Code: 8Bxxx
(4) S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free TSOP-6 SQ3418EEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Currentb L = 0.1 mH TC = 25 °C TC = 125 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25 °Ca TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 40 ± 20 8 5 6 32 5 1.2 5 1.6 - 55 to + 175 mJ W °C A UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJF LIMIT 110 30 UNIT °C/W
S11-2124-Rev. C, 07-Nov-11
1
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