Automotive N-Channel MOSFET
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SQ2360EES
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT S...
Description
www.DataSheet.co.kr
SQ2360EES
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
TO-236 (SOT-23)
FEATURES
60 0.085 0.130 4.4 Single
D
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedc 100 % Rg and UIS Tested Typical ESD Protection 800 V Compliant to RoHS Directive 2002/95/EC
G
1 3 D
G
S
2
Top View SQ2360EES Marking Code: 8Mxxx
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free SOT-23 SQ2360EES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 4.4 2.5 3.7 17 6 1.8 3 1 - 55 to + 175 mJ W °C A UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJF LIMIT 166 50 UNIT °C/W
S11-2111-Rev. E, 07-Nov-11
1
Document Number: 65352
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