FMH23N50ES

FMH23N50ES Super FAP-E3S series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Outline Drawings [mm] TO-3P (Q) Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) GATE DRAIN SOURCE Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID IDP VGS IAR EAS EAR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Characteristics 500 500 ±23 ±92 ±30 23 767.3 31.5 5.4 100 2.50 315 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakag...