2SC3393

Ordering number:EN1392A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1339/2SC3393 High-Speed Switching Applications Features · Very small-sized package permitting sets to be smallsized, slim. · High breakdown voltage : VCEO=(–)50V. · Complementary pair transistor having large current capacity and high fT. · Adoption of FBET process. Switching Time Test Circuit Package Dimensions unit:mm 2033 [2SA1339/2SC3393] ( ) : 2SA1339 (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) B : Base C : Collector E : Emitter SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)60 (–)50 (–)5 (–)500 (–)800 300 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common Base Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz IC=(–)100mA, IB=(–)10mA 100* 3...