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ZXMHN6A07T8 Dataheets PDF



Part Number ZXMHN6A07T8
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description 60V N-CHANNEL MOSFET H-BRIDGE
Datasheet ZXMHN6A07T8 DatasheetZXMHN6A07T8 Datasheet (PDF)

www.DataSheet.co.kr ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V(BR)DSS= 60V : RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · Compact package · Low on state losses · Low drive requirements · Operates up to 60V · 1 Amp continuous rating SM8 APPLICATI.

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www.DataSheet.co.kr ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V(BR)DSS= 60V : RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · Compact package · Low on state losses · Low drive requirements · Operates up to 60V · 1 Amp continuous rating SM8 APPLICATIONS · Motor control ORDERING INFORMATION DEVICE ZXMHN6 A0 7 T8 TA ZXMHN6 A0 7 T8 TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1,000 units 4,000 units PINOUT DEVICE MARKING · ZXMH N6A07 TOP VIEW ISSUE 2 - MAY 2004 1 SEMICONDUCTORS Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ZXMHN6A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate-source voltage SYMBOL V DSS V GS LIMIT 60 ± 20 1.6 1.3 1.4 I DM IS I SM PTOT 1.1 1.4 1.6 W W W (c) UNIT V V A A A A A A Continuous drain current (V GS= 1 0 V; T A = 2 5 ° C)(b) (d) I D (V GS= 1 0 V; T A = 7 0 ° C)(b) (d) (V GS= 1 0 V; T A = 2 5 ° C)(a) (d) Pulsed drain current (c) 9 1 9 Continuous source current (body diode) (b) (d) Pulsed source current (body diode) Any Single transistor " on" (a) (d) Single transistor ‘ on’ (b) (d) Two transistors ‘ on’ equally (a) (e) Linear derating factor above 2 5 ° C (a) Single transistor " on" (a) (d) Single transistor ‘ on’ (b) (d) Two transistors ‘ on’ equally (a) (e) Thermal resistance - junction to ambient Single transistor " on" (a) (d) Single transistor " on" (b) (d) Total power dissipation at T A = 2 5 ° C 8.8 11.2 13.2 Rth(j-amb) 114 89 76 T j, T stg -55 to + 150 mW/° C mW/° C mW/° C ° C/W ° C/W ° C/W °C Two transistors ‘ on’ equally (a) (e) Operating and storage temperature range (a) For a device mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2oz weight copper in still air conditions with the heat sink split into three equal areas, one for each drain connection. (b) For a device surface mounted on a FR4 PCB at t Ͻ = 10 sec. (c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, duty cycle 2% , pulse width 300 ␮S in still air conditions with the heat sink split into three equal areas, one for each drain connection. (d) For device with one active die. (e) For any two die not sharing the same drain connection. ISSUE 2 - MAY 2004 SEMICONDUCTORS 2 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ZXMHN6A07T8 CHARACTERISTICS ISSUE 2 - MAY 2004 3 SEMICONDUCTORS Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ZXMHN6A07T8 ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated) PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (1 ) Forward transconductance DYNAMIC (3 ) Input capacitance Output capacitance Reverse transfer capacita.


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