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P-Channel Enhancement Mode Field Effect Transistor FEATURES
-20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5...
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P-Channel Enhancement Mode Field Effect
Transistor FEATURES
-20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 8
CEM2187
D1 7
D2 6
D2 5
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -20 Units V V A A W C
±12
-7.6 -30 2.0 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice . 1
Rev 2. 2010.Oct http://www.cetsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
CEM2187
P-Channel Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Del...