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CEH2310

N-Channel Enhancement Mode Field Effect Transistor

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www.DataSheet.co.kr CEH2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 5 6 3 2 1 TSOP-6 S(4) G(3) 4 D(1,2,5,6,) PRELIMINARY ABSO...

CET

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