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2SC3380 Dataheets PDF



Part Number 2SC3380
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Triple Diffused Transistor
Datasheet 2SC3380 Datasheet2SC3380 Datasheet (PDF)

2SC3380 Silicon NPN Triple Diffused Application • High frequency high voltage amplifier • High voltage switch Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC3380 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC * Tj Tstg 1 Ratings 300 300 5 100 1 150 –55 to +150 Unit .

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2SC3380 Silicon NPN Triple Diffused Application • High frequency high voltage amplifier • High voltage switch Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC3380 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC * Tj Tstg 1 Ratings 300 300 5 100 1 150 –55 to +150 Unit V V V mA W °C °C 1. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Note: Marking is “AS”. Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CEO VCE(sat) hFE fT Cob Min 300 300 5 — — 30 — — Typ — — — — — — 80 — Max — — — 1 1.5 200 — 4 MHz pF Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ I C = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCE = 20 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz 2 2SC3380 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) (on the alumina ceramic board) Collector Current IC (mA) Typical Output Characteristics 1.0 14 12 10 0.6 9 8 4 0.2 2 µA IB = 0 0 100 150 50 Ambient Temperature Ta (°C) 0 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage VCE (V) 0.8 0.8 0.4 0.4 Typical Transfer Characteristics 50 DC Current Transfer Ratio hFE Collector Current IC (mA) VCE = 20 V Ta = 25°C 100 DC Current Transfer Ratio vs. Collector Current VCE = 20 V 40 10 V 30 30 20 10 Pulse Ta = 25°C 10 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 1 3 10 30 Collector Current IC (mA) 100 3 2SC3380 Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current 10 Pulse IC = 10 IB Ta = 25°C Gain Bandwidth Product fT (MHz) 100 Pulse VCE = 20 V Gain Bandwidth Product vs. Collector Current 80 3 60 1.0 40 0.3 20 0.1 1 3 10 30 Collector Current IC (mA) 100 0 0.5 1.0 2 5 10 20 Collector Current IC (mA) 50 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 50 f = 1 MHz IE = 0 20 10 5 2 1.0 0.5 1 50 100 2 5 10 20 Collector to Base Voltage VCB (V) 4 Unit: mm 4.5 ± 0.1 0.4 1.8 Max φ1 1.5 ± 0.1 0.44 Max (2.5) (1.5) 1.5 1.5 3.0 0.8 Min 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.4) 0.53 Max 0.48 Max 2.5 ± 0.1 4.25 Max UPAK — Conforms 0.050 g (0.2) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third part.


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