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SW4N60V

N-Channel MOSFET

Description

www.DataSheet.co.kr SAMWIN SW4N60V N-channel MOSFET BVDSS : 600V ID : 4.0A RDS(ON) : 2.5ohm 1 2 2 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 25nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 3 1 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of...

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