Transistors
2SC3354
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Unit: mm
4....
Transistors
2SC3354
Silicon
NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Unit: mm
4.0±0.2
2.0±0.2
15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6
■ Features
Optimum for high-density mounting Allowing supply with the radial taping
0.75 max.
High transition frequency fT
/ ■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
V
a e cle con Collector current
IC
50
mA
lifecy , dis Collector power dissipation
PC
300
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
0.45+–00..1200
(2.5) (2.5)
123
0.45+–00..1200
0.7±0.1
1: Emitter 2: Collector 3: Base NS-B1 Package
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
inc typ Collector-base voltage (Emitter open)
c tinued ance Emitter-base voltage (Collector open) M is con inten Base-emitter voltage
/Dis ma Forward current transfer ratio *
D ance type, Transition frequency
ten ce Reverse transfer capacitance ain nan (Common base)
VCBO VEBO VBE hFE
fT Crb
IC = 100 µA, IE = 0
30
IE = 10 µA, IC = 0
3
VCB = 10 V, IE = −2 mA
VCB = 10 V, IE = −2 mA
25
VCB = 10 V, IE = −15 mA, f = 200 MHz 600
VCE = 6 V, IC = 0, f = 1 MHz
720
1 200 0.8
250 1 60...