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2SC3336

Part Number	2SC3336
Manufacturer	Hitachi Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Ba...
Datasheet	2SC3336 PDF File

Overview

2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1.
Base 2.
Collector (Flange) 3.
Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) IB PC * Tj Tstg 1 Ratings 500 400 10 15 25 7.
5 100 150 –55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ ...

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