2SC3328

2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SA1315 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 5 2 1 900 150 −55 to 150 Unit V V V A A mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Weight: 0.36 g (typ.) 1 2004-07-07 Free Datasheet http://www.Datasheet4U.com 2SC3328 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 20 µs IB1 Switching time Storage time tstg Input Test Condition VCB = 80 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.5 A IC = 1 A, IB = 0.05 A IC = 1 A, IB = 0.05 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Output 30 Ω Min ― ― 80 70 40 ― ― ― ― ― Typ. ― ― ― ― ― 0.15 0.9 100 30 0.2 Max 1.0 1.0 ― 240 ― 0.5 1.2 ― ― ― V V MHz pF Unit µA µA V IB1 IB...